ON FQPF9N50C

N 通道500 V9A（Tc）4V @ 250µA44W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The FQPF9N25CYDTU is MOSFET N-CH 250V 8.8A TO-220F, that includes Tube Packaging, they are designed to operate with a 0.090478 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 38 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 65 ns, and Rise Time is 85 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 8.8 A, and the Vds Drain Source Breakdown Voltage is 250 V, and Rds On Drain Source Resistance is 430 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 90 ns, and the Typical Turn On Delay Time is 15 ns, and Channel Mode is Enhancement.

The FQPF9N50 is MOSFET N-CH 500V 5.3A TO-220F manufactured by KERSEMI. The FQPF9N50 is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 500V 5.3A TO-220F, N-Channel 500V 5.3A (Tc) 50W (Tc) Through Hole TO-220F, Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) TO-220F Rail.

Features

QFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
500 V Drain to Source Voltage (Vdss)
9A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
800mOhm @ 4.5A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
35 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
1030 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
44W (Tc) Power Dissipation (Max)
Through Hole Mounting Type