ON 2N7002LT1G

N 通道60 V115mA（Tc）2.5V @ 250µA225mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
60 V Drain to Source Voltage (Vdss)
115mA (Tc) Current - Continuous Drain (Id) @ 25°C
5V, 10V Drive Voltage (Max Rds On, Min Rds On)
7.5Ohm @ 500mA, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
±20V Vgs (Max)
50 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
225mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type