ON BSS138LT1G

N 通道50 V200mA（Ta）1.5V @ 1mA225mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138LT1G is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

• Low Threshold Voltage (VGS(th): 0.85 V?1.5 V) Makes it Ideal for Low Voltage Applications

• Miniature SOT?23 Surface Mount Package Saves Board Space

• BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

• These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant

Applications

• DC?DC converters

• Power management

• Battery?powered products