ON MBRS360T3G

肖特基60 V3A

Overview

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features

Tape & Reel (TR) Package
a maximal reverse leakage current of 150μA volts
an average rectified current of 3A volts
a current rating of 3A
the peak reverse is 150μA

SMC Supplier Device Package

Applications

There are a lot of ON Semiconductor
MBRS360T3G applications of single-phase diode rectifier.

• DC motor control and drives
• Battery chargers
• Welders
• Power converters
• Reverse Polarity Protection
• Ultra High-Speed Switching
• Freewheeling
• Polarity Protection Diode
• Recirculating Diode
• Switching Diode