ON FDN338P

P 通道20 V1.6A（Ta）1.5V @ 250µA500mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
20 V Drain to Source Voltage (Vdss)
1.6A (Ta) Current - Continuous Drain (Id) @ 25°C
2.5V, 4.5V Drive Voltage (Max Rds On, Min Rds On)
115mOhm @ 1.6A, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
6.2 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±8V Vgs (Max)
451 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
500mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type