ON FDV301N

N 通道25 V220mA（Ta）1.06V @ 250µA350mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Features

? Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

? Replace multiple NPN digital transistors with one DMOS FET.

? 25 V, 0.22 A continuous, 0.5 A Peak.

RDS(ON) = 5 W @ VGS= 2.7 V

RDS(ON) = 4 W @ VGS= 4.5 V

? Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V.

? This Device is Pb?Free and Halide Free

Applications

? Low Voltage

? Power Management Applications

? Buffer Amplifier

? Analog Switch

? Current Limiter