ON FQPF7P06

P 通道60 V5.3A（Tc）4V @ 250µA24W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

The FQPF7N65CYDTU is MOSFET N-CH 650V 7A TO-220F, that includes Tube Packaging, they are designed to operate with a FQPF7N65CYDTU_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.090478 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 52 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 55 ns, and the Rise Time is 50 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 7 A, and Vds Drain Source Breakdown Voltage is 650 V, and the Rds On Drain Source Resistance is 1.4 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 90 ns, and Typical Turn On Delay Time is 20 ns, and the Forward Transconductance Min is 4 S, and Channel Mode is Enhancement.

FQPF7N90 with EDA / CAD Models manufactured by FC. The FQPF7N90 is available in TO-220 Package, is part of the IC Chips.

Features

• Low gate charge

• Low on-state resistance

• Superior switching performance

• Improved dv/dt capability

• Available in the TO-220F package

Applications

• Automotive

• DC/DC converters

• High-efficiency switching