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FDV304P_NB8U003

ON FDV304P_NB8U003

P 通道25 V460mA(Ta)1.5V @ 250µA350mW(Ta)-55°C ~ 150°C(TJ)表面贴装型

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FDV304P_NB8U003
MOSFET P-CH 25V 460MA SOT-23
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产品详情

Overview

The FDV304P is MOSFET P-CH 25V 460MA SOT-23, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a FDV304P_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.002116 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-236-3, SC-59, SOT-23-3, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a SOT-23 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 350mW, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 25V, and the Input Capacitance Ciss Vds is 63pF @ 10V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 460mA (Ta), and Rds On Max Id Vgs is 1.1 Ohm @ 500mA, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 1.5nC @ 4.5V, and the Pd Power Dissipation is 350 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns, and the Rise Time is 8 ns, and Vgs Gate Source Voltage is - 8 V, and the Id Continuous Drain Current is 460 mA, and Vds Drain Source Breakdown Voltage is - 25 V, and the Rds On Drain Source Resistance is 1.1 Ohms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 55 ns, and Typical Turn On Delay Time is 6 ns, and the Forward Transconductance Min is 0.8 S, and Channel Mode is Enhancement.

FDV304P/304 with EDA / CAD Models manufactured by FAIRCHIL. The FDV304P/304 is available in SOT-23 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
25 V Drain to Source Voltage (Vdss)
460mA (Ta) Current - Continuous Drain (Id) @ 25°C
2.7V, 4.5V Drive Voltage (Max Rds On, Min Rds On)
1.1Ohm @ 500mA, 4.5V Rds On (Max) @ Id, Vgs
1.5V @ 250µA Vgs(th) (Max) @ Id
1.5 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
63 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
350mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 25 V
25°C 时电流 - 连续漏极 (Id): 460mA(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 2.7V,4.5V
漏极电流和栅极至源极电压下的最大导通电阻: 1.1 欧姆 @ 500mA,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 1.5 nC @ 4.5 V
最大栅极源电压: -8V
Vds 时的最大输入电容 (Ciss): 63 pF @ 10 V
最大功率耗散: 350mW(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: SOT-23-3
封装/外壳: TO-236-3,SC-59,SOT-23-3
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