ON FDMS86369

N 通道80 V65A（Tc）4V @ 250µA107W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

The FDMS86350 is MOSFET N-CH 80V 80A POWER56, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001993 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerTDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a Power56 of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.7W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 80V, and the Input Capacitance Ciss Vds is 10680pF @ 40V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 25A (Ta), 130A (Tc), and Rds On Max Id Vgs is 2.4 mOhm @ 25A, 10V, and the Vgs th Max Id is 4.5V @ 250μA, and Gate Charge Qg Vgs is 155nC @ 10V, and the Pd Power Dissipation is 156 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 11 ns, and the Rise Time is 34 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 80 A, and Vds Drain Source Breakdown Voltage is 80 V, and the Vgs th Gate Source Threshold Voltage is 3.8 V, and Rds On Drain Source Resistance is 2 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 40 ns, and the Typical Turn On Delay Time is 50 ns, and Qg Gate Charge is 110 nC, and the Forward Transconductance Min is 70 S.

The FDMS86322 is MOSFET N-CH 80V 60A LL POWER56, that includes SMD/SMT Mounting Style, they are designed to operate with a Single Configuration, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Reel, Package Case is designed to work in Power-56-8, as well as the N-Channel Transistor Polarity, the device can also be used as 80 V Vds Drain Source Breakdown Voltage. In addition, the Rds On Drain Source Resistance is 7.65 mOhms, the device is offered in 55 nC Qg Gate Charge, the device has a 45 S of Forward Transconductance Min, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rise Time is 20 ns, and Fall Time is 13 ns, and the Id Continuous Drain Current is 13 A, and Pd Power Dissipation is 104 W, and the Transistor Type is 1 N-Channel, and Number of Channels is 1 Channel, and the Unit Weight is 0.002402 oz, and Vgs Gate Source Voltage is +/- 20 V, it has an Maximum Operating Temperature range of + 150 C.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
80 V Drain to Source Voltage (Vdss)
65A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
7.5mOhm @ 65A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
46 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
2470 pF @ 40 V Input Capacitance (Ciss) (Max) @ Vds
107W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type