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FDS4559-F085

ON FDS4559-F085

MOSFET(金属氧化物)逻辑电平门N 和 P 沟道60V4.5A,3.5A55 毫欧 @ 4.5A,10V3V @ 250µA

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FDS4559-F085
MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
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¥12.22

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

FDS4559_F085 with pin details, that includes Automotive, AEC-Q101, PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-SOIC of Supplier Device Package, and Configuration is N-Channel P-Channel, and the FET Type is N and P-Channel, and Power Max is 2W, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 650pF @ 25V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4.5A, 3.5A, and Rds On Max Id Vgs is 55 mOhm @ 4.5A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 18nC @ 10V, and the Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 6 ns 12 ns, and the Rise Time is 8 ns 10 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 4.5 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 55 mOhms 105 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 19 ns 19 ns, and Typical Turn On Delay Time is 11 ns 7 ns, and the Forward Transconductance Min is 14 S 9 S, and Channel Mode is Enhancement.

FDS4559_NL with EDA / CAD Models manufactured by FAIRCHILD. The FDS4559_NL is available in SOP-8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
4.5A, 3.5A Current - Continuous Drain (Id) @ 25°C
55mOhm @ 4.5A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
18nC @ 10V Gate Charge (Qg) (Max) @ Vgs
650pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
2W Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: Automotive, AEC-Q101, PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: N 和 P 沟道
漏源电压(Vdss): 60V
25°C 时电流 - 连续漏极 (Id): 4.5A,3.5A
漏极电流和栅极至源极电压下的最大导通电阻: 55 毫欧 @ 4.5A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 18nC @ 10V
Vds 时的最大输入电容 (Ciss): 650pF @ 25V
最大功率: 2W
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
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