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FDD86569-F085

ON FDD86569-F085

N 通道60 V90A(Tc)4V @ 250µA150W(Tj)-55°C ~ 175°C(TJ)表面贴装型

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FDD86569-F085
MOSFET N-CH 60V 90A DPAK
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¥13.80

价格更新:一个月前

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产品详情

Overview

The FDD8647L is MOSFET N-CH 40V 14A DPAK, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a D-Pak of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 3.1W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 40V, and the Input Capacitance Ciss Vds is 1640pF @ 20V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 14A (Ta), 42A (Tc), and Rds On Max Id Vgs is 9 mOhm @ 13A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 28nC @ 10V, and the Pd Power Dissipation is 3.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 2 ns, and the Rise Time is 3 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 14 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Rds On Drain Source Resistance is 9 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 19 ns, and Typical Turn On Delay Time is 8 ns, and the Channel Mode is Enhancement.

FDD86569_F085 with EDA / CAD Models, that includes SMD/SMT Mounting Style, they are designed to operate with a Single Configuration, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Reel, Transistor Polarity is designed to work in N-Channel, as well as the Enhancement Channel Mode, the device can also be used as DPAK-3 Package Case. In addition, the Id Continuous Drain Current is 90 A, the device is offered in 8 ns Fall Time, the device has a 60 V of Vds Drain Source Breakdown Voltage, and Qg Gate Charge is 35 nC, and the Typical Turn Off Delay Time is 22 ns, and Rise Time is 20 ns, and the Vgs th Gate Source Threshold Voltage is 2 V, and Pd Power Dissipation is 150 W, and the Typical Turn On Delay Time is 15 ns, and Rds On Drain Source Resistance is 11.3 mOhms, and the Transistor Type is 1 N-Channel, and Number of Channels is 1 Channel, and the Unit Weight is 0.011640 oz, and Vgs Gate Source Voltage is +/- 20 V, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C.

Features

Tape & Reel (TR) Package


  • At VGS = 10V, ID = 80 A, the typical RDS(on) is 4.2 m, and the typical Qg(tot) is 35 nC.

  • Capability of UIS

  • RoHS compliant and AEC Q101 qualified



Surface Mount Mounting Type

Applications


  • Control of automobile engines

  • "PowerTrain Management"

  • Drivers for solenoids and motors

  • Integrated Alternator/Starter

  • 12V Systems Primary Switch


产品属性
全选
型号系列: Automotive, AEC-Q101, PowerTrench®
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 90A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 5.7 毫欧 @ 80A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 52 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 2520 pF @ 30 V
最大功率耗散: 150W(Tj)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: TO-252AA
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
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