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FDBL86561-F085

ON FDBL86561-F085

N 通道60 V300A(Tc)4V @ 250µA429W(Tj)-55°C ~ 175°C(TJ)表面贴装型

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FDBL86561-F085
MOSFET N-CH 60V 300A 8HPSOF
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¥40.00

价格更新:一个月前

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产品详情

Overview

FDBL86363_F085 with pin details, that includes Reel Packaging, they are designed to operate with a 0.029986 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as MO-299A-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 357 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 33 ns, and Rise Time is 63 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 240 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Vgs th Gate Source Threshold Voltage is 2 V, and the Rds On Drain Source Resistance is 4.1 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 61 ns, and Typical Turn On Delay Time is 39 ns, and the Qg Gate Charge is 130 nC, and Channel Mode is Enhancement.

FDBL86561_F085 with EDA / CAD Models, that includes SMD/SMT Mounting Style, they are designed to operate with a Single Configuration, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Reel, Transistor Polarity is designed to work in N-Channel, as well as the MO-299A-8 Package Case, the device can also be used as Enhancement Channel Mode. In addition, the Typical Turn Off Delay Time is 80 ns, the device is offered in 61 ns Rise Time, the device has a 60 V of Vds Drain Source Breakdown Voltage, and Typical Turn On Delay Time is 45 ns, and the Pd Power Dissipation is 429 W, and Fall Time is 41 ns, and the Id Continuous Drain Current is 300 A, and Vgs Gate Source Voltage is 20 V, and the Rds On Drain Source Resistance is 2.2 mOhms, and Vgs th Gate Source Threshold Voltage is 2 V, and the Qg Gate Charge is 170 nC, and Transistor Type is 1 N-Channel, and the Number of Channels is 1 Channel, and Unit Weight is 0.029986 oz, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C.

Features

Tape & Reel (TR) Package
the avalanche energy rating (Eas) is 1167 mJ
a 60V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
FDBL86561-F085 applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
产品属性
全选
型号系列: Automotive, AEC-Q101, PowerTrench®
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 300A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 1.1 毫欧 @ 80A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 220 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 13650 pF @ 30 V
最大功率耗散: 429W(Tj)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: 8-HPSOF
封装/外壳: 8-PowerSFN
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onsemi

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