ON FDBL86561-F085
N 通道60 V300A(Tc)4V @ 250µA429W(Tj)-55°C ~ 175°C(TJ)表面贴装型
比较






¥40.00
价格更新:一个月前博斯克质量保证







Overview
FDBL86363_F085 with pin details, that includes Reel Packaging, they are designed to operate with a 0.029986 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as MO-299A-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 357 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 33 ns, and Rise Time is 63 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 240 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Vgs th Gate Source Threshold Voltage is 2 V, and the Rds On Drain Source Resistance is 4.1 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 61 ns, and Typical Turn On Delay Time is 39 ns, and the Qg Gate Charge is 130 nC, and Channel Mode is Enhancement.
FDBL86561_F085 with EDA / CAD Models, that includes SMD/SMT Mounting Style, they are designed to operate with a Single Configuration, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Reel, Transistor Polarity is designed to work in N-Channel, as well as the MO-299A-8 Package Case, the device can also be used as Enhancement Channel Mode. In addition, the Typical Turn Off Delay Time is 80 ns, the device is offered in 61 ns Rise Time, the device has a 60 V of Vds Drain Source Breakdown Voltage, and Typical Turn On Delay Time is 45 ns, and the Pd Power Dissipation is 429 W, and Fall Time is 41 ns, and the Id Continuous Drain Current is 300 A, and Vgs Gate Source Voltage is 20 V, and the Rds On Drain Source Resistance is 2.2 mOhms, and Vgs th Gate Source Threshold Voltage is 2 V, and the Qg Gate Charge is 170 nC, and Transistor Type is 1 N-Channel, and the Number of Channels is 1 Channel, and Unit Weight is 0.029986 oz, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C.
Features
Tape & Reel (TR) Packagethe avalanche energy rating (Eas) is 1167 mJ
a 60V drain to source voltage (Vdss)
Surface Mount Mounting Type
Applications
There are a lot of ON Semiconductor
FDBL86561-F085 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- 起步价为$40,南非、巴西、印度、巴基斯坦、以色列等国家的价格会有所变动,详情请咨询相关客服人员。
- 包裹重量≤0.5kg的基本运费根据时区和国家而定。
- 我们的产品目前使用DHL,顺丰和UPS运输。如果数量少,则选择联邦快递。
- 一旦发货,预期交货时间跟选择的运输方式有所变动。
准备产品

真空包装

防静电袋

单独包装

包装盒

条形码运输标签


FCH067N65S3-F155
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, N

FDBL86210
Fairchild Semiconductor
N-CHANNEL POWER MOSFET

FDB86360-F085
onsemi
MOSFET N-CH 80V 110A D2PAK

FCH067N65S3-F155
onsemi
MOSFET N-CH 650V 44A TO247

FDB9503L-F085
onsemi
MOSFET P-CH 40V 110A D2PAK

FDB86363-F085
onsemi
MOSFET N-CH 80V 110A D2PAK

onsemi
onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。
热门零件号
实时新闻
博斯克数字
收入: 85M
2022年的收入为8500万美元,与2021年增长63%。
国家: 105
博斯克服务全球105个国家的客户。
配件发货: 25M+
我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。
制造商: 950
2022年,博斯克从近950个制造商售卖了配件。
热门产品
FDC604P
onsemi
MOSFET P-CH 20V 5.5A SUPERSOT6
FDN340P
onsemi
MOSFET P-CH 20V 2A SUPERSOT3
2N7002LT1G
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FDV301N
onsemi
MOSFET N-CH 25V 220MA SOT23
BSS138LT1G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FDN338P
onsemi
MOSFET P-CH 20V 1.6A SUPERSOT3
FDMA908PZ
onsemi
MOSFET P-CH 12V 12A 6MICROFET
FDMC86139P
onsemi
MOSFET P-CH 100V 4.4A/15A 8MLP
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN

FDD2572
onsemi
MOSFET N-CH 150V 4A/29A TO252AA