ON FDB86360-F085

N 通道80 V110A（Tc）4.5V @ 250µA333W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

The FDB86360_F085 is MOSFET N-Channel Power Trench MOSFET, that includes Reel Packaging, they are designed to operate with a 0.046296 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-263-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 333 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 70 ns, and Rise Time is 197 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 110 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 1.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 86 ns, and Typical Turn On Delay Time is 75 ns, and the Qg Gate Charge is 207 nC.

FDB86360 with EDA / CAD Models manufactured by FAIRCHILD. The FDB86360 is available in TO-263 Package, is part of the FETs - Single.

Features

„ Automotive Engine Control

„ Powertrain Management

„ Solenoid and Motor Drivers

„ Integrated Starter/alternator

„ Primary Switch for 12V Systems

Applications

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel.