联系我们
中文
FDV301N-F169

ON FDV301N-F169

N 通道25 V220mA(Ta)1.06V @ 250µA350mW(Ta)-55°C ~ 150°C(TJ)表面贴装型

比较
onsemi
FDV301N-F169
MOSFET N-CH 25V 220MA SOT23
paypalvisamastercarddiscover
upsdhlsf
比较

¥0.29

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

FDV301N_NB9V005 with pin details, that includes Reel Packaging, they are designed to operate with a 0.050717 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-23-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 350 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 6 ns, and Rise Time is 6 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 500 mA, and the Vds Drain Source Breakdown Voltage is 25 V, and Rds On Drain Source Resistance is 4 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 3.5 ns, and the Typical Turn On Delay Time is 3.2 ns, and Channel Mode is Enhancement.

FDV301N_NL with EDA / CAD Models manufactured by FAIRCHILD. The FDV301N_NL is available in TO-23 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
25 V Drain to Source Voltage (Vdss)
220mA (Ta) Current - Continuous Drain (Id) @ 25°C
2.7V, 4.5V Drive Voltage (Max Rds On, Min Rds On)
4Ohm @ 400mA, 4.5V Rds On (Max) @ Id, Vgs
1.06V @ 250µA Vgs(th) (Max) @ Id
0.7 nC @ 4.5 V Gate Charge (Qg) (Max) @ Vgs
±8V Vgs (Max)
9.5 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
350mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 25 V
25°C 时电流 - 连续漏极 (Id): 220mA(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 2.7V,4.5V
漏极电流和栅极至源极电压下的最大导通电阻: 4 欧姆 @ 400mA,4.5V
漏极电流下的最大栅极阈值电压: 1.06V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 0.7 nC @ 4.5 V
最大栅极源电压: ±8V
Vds 时的最大输入电容 (Ciss): 9.5 pF @ 10 V
最大功率耗散: 350mW(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: SOT-23-3
封装/外壳: TO-236-3,SC-59,SOT-23-3
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z