ON FDS4435BZ

P 通道30 V8.8A（Ta）3V @ 250µA2.5W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.  

Features Max rDS(on) = 20m at VGS = -10V, ID = -8.8A Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS compliant

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
30 V Drain to Source Voltage (Vdss)
8.8A (Ta) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
20mOhm @ 8.8A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
40 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±25V Vgs (Max)
1845 pF @ 15 V Input Capacitance (Ciss) (Max) @ Vds
2.5W (Ta) Power Dissipation (Max)
Surface Mount Mounting Type