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FDS3812

ON FDS3812

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)80V3.4A74 毫欧 @ 3.4A,10V4V @ 250µA

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FDS3812
MOSFET 2N-CH 80V 3.4A 8SOIC
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¥2.04

价格更新:一个月前

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产品详情

Overview

The FDS3692 is MOSFET N-CH 100V 4.5A 8-SO, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FDS3692_NL, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is 8-SOIC, and the Configuration is Single Quad Drain Triple Source, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 2.5W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 100V, and Input Capacitance Ciss Vds is 746pF @ 25V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 4.5A (Ta), and the Rds On Max Id Vgs is 60 mOhm @ 4.5A, 10V, and Vgs th Max Id is 4V @ 250μA, and the Gate Charge Qg Vgs is 15nC @ 10V, and Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 26 ns, and Rise Time is 26 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 4.5 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 50 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 34 ns, and the Typical Turn On Delay Time is 9.8 ns, and Channel Mode is Enhancement.

FDS3692-NL with circuit diagram manufactured by FAIRCHILD. The FDS3692-NL is available in SO8 Package, is part of the IC Chips.

Features

PowerTrench® Series


? quick switching times


? Minimal gate fee (13nC typ)


? Ultra-low RDS with high performance trench technology (ON)


? The capacity to handle large current and power loads



Surface Mount Mounting Type

Applications


Switching applications


产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 80V
25°C 时电流 - 连续漏极 (Id): 3.4A
漏极电流和栅极至源极电压下的最大导通电阻: 74 毫欧 @ 3.4A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 18nC @ 10V
Vds 时的最大输入电容 (Ciss): 634pF @ 40V
最大功率: 900mW
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
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