ON FDS3601

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）100V1.3A480 毫欧 @ 1.3A，10V4V @ 250µA

Overview

The FDS3590 is MOSFET N-CH 80V 6.5A 8SOIC, that includes PowerTrench Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a FDS3590_NL, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOIC-Narrow-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Quad Drain Triple Source Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 12 ns, and Rise Time is 8 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 6.5 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Rds On Drain Source Resistance is 32 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 26 ns, and the Typical Turn On Delay Time is 11 ns, and Forward Transconductance Min is 25 S, and the Channel Mode is Enhancement.

FDS3590-NL with circuit diagram manufactured by FAIRCHILD. The FDS3590-NL is available in SOP8 Package, is part of the IC Chips.

Features

? quick switching times

? Minimal gate fee (3.7nC typical)

? Ultra-low RDS with high performance trench technology (ON)

? The capacity to handle large current and power loads

Applications

Switching applications