ON FDS3570

N 通道80 V9A（Ta）4V @ 250µA2.5W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

The FDS3512 is MOSFET N-CH 80V 4A 8SOIC, that includes Reel Packaging, they are designed to operate with a FDS3512_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOIC-Narrow-8, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single Quad Drain Triple Source, the device is offered in 1 N-Channel Transistor Type, the device has a 2.5 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 4 ns, and the Rise Time is 3 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 4 A, and Vds Drain Source Breakdown Voltage is 80 V, and the Rds On Drain Source Resistance is 70 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 24 ns, and Typical Turn On Delay Time is 7 ns, and the Forward Transconductance Min is 14 S, and Channel Mode is Enhancement.

FDS3512-NL with circuit diagram manufactured by FAIRCHILD. The FDS3512-NL is available in SO8 Package, is part of the IC Chips.

Features

• 9A, 80V. RDS(on) = 0.019?@ VGS =10V  

                    RDS(on) = 0.022?@ VGS = 6V

• Fast switching speed.

• High-performance trench technology for extremely low RDS(on)

• High power and current handling capability.

Applications

• Cellular phones 

• Laptop computers

• Photovoltaic systems 

• Wind turbines

• Shunt voltage regulator and the series voltage regulator