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FDS3912

ON FDS3912

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)100V3A125 毫欧 @ 3A,10V4V @ 250µA

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FDS3912
MOSFET 2N-CH 100V 3A 8SOIC
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价格更新:一个月前

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产品详情

Overview

The FDS3890 is MOSFET 2N-CH 80V 4.7A 8-SO, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FDS3890_NL, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 8-SOIC, and the Configuration is Dual Dual Drain, and FET Type is 2 N-Channel (Dual), and the Power Max is 900mW, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 80V, and Input Capacitance Ciss Vds is 1180pF @ 40V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 4.7A, and the Rds On Max Id Vgs is 44 mOhm @ 4.7A, 10V, and Vgs th Max Id is 4V @ 250μA, and the Gate Charge Qg Vgs is 35nC @ 10V, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 12 ns, and Rise Time is 8 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 4.7 A, and the Vds Drain Source Breakdown Voltage is 80 V, and Rds On Drain Source Resistance is 44 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 26 ns, and the Typical Turn On Delay Time is 11 ns, and Forward Transconductance Min is 24 S, and the Channel Mode is Enhancement.

FDS3902 with circuit diagram manufactured by FAIRCHILD. The FDS3902 is available in SOP-8 Package, is part of the IC Chips.

Features

PowerTrench® Series


  • brisk switching rate

  • Affordable gate fee (14 nC typ)

  • Highly efficient trench technology for incredibly low RDS (ON)

  • Capability of managing large currents and powers



Surface Mount Mounting Type

Applications


This product is all-purpose and appropriate for a wide range of use


产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 100V
25°C 时电流 - 连续漏极 (Id): 3A
漏极电流和栅极至源极电压下的最大导通电阻: 125 毫欧 @ 3A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 20nC @ 10V
Vds 时的最大输入电容 (Ciss): 632pF @ 50V
最大功率: 900mW
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
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