ON FDMS86101DC

N 通道100 V14.5A（Ta），60A（Tc）4V @ 250µA3.2W（Ta），125W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• High performance technology for extremely low rDS(on)

• 100% UIL Tested

• RoHS Compliant

• Shielded Gate MOSFET Technology

• DUAL COOL Top Side Cooling PQFN package

• Max rDS(on) = 7.5 m at VGS = 10 V, ID = 14.5 A

• Max rDS(on) = 12 m at VGS = 6 V, ID = 11.5 A

Applications

• Primary DC?DC MOSFET

• Secondary Synchronous Rectifier

• Load Switch

• Analog Electronics

• Audio Power Amplifiers