ON FDMS8320LDC

N 通道40 V44A（Ta），130A（Tc）3V @ 250µA3.2W（Ta），125W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

Features

• Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A

• Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A

• Advanced Package and Silicon combination for low rDS(on) and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Applications

• Energy Generation & Distribution

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial