ON FDMS8018

N 通道30 V30A（Ta），120A（Tc）3V @ 250µA2.5W（Ta），83W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

Features

• 100% UIL tested

• RoHS Compliant

• MSL1 robust package design

• Max rDS(on) = 1.8 m? at VGS = 10 V, ID = 30 A

• Max rDS(on) = 2.4 m? at VGS = 4.5 V, ID = 26 A

• Advanced Package and Silicon combination for low rDS(on) and high efficiency

• Next-generation enhanced body diode technology, engineered for soft recovery

Applications

• DC-DC Conversion

• Motor Bridge Switch

• Load Switching

• Consumer