ON FDMS8025S

N 通道30 V24A（Ta），49A（Tc）3V @ 1mA2.5W（Ta），50W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

Features

• Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A

• Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A

• Advanced package and silicon combination for low RDS(on) and high efficiency

• SyncFET Schottky Body Diode

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Applications

• Synchronous Rectifier for DC/DC Converters

• Notebook Vcore/GPU low side switch

• Networking Point of Load low side switch

• Telecom secondary side rectification