联系我们
中文
FDMS8558S

ON FDMS8558S

N 通道25 V33A(Ta),90A(Tc)2.2V @ 1mA2.5W(Ta),78W(Tc)-55°C ~ 150°C(TJ)表面贴装型

比较
onsemi
FDMS8558S
MOSFET N-CH 25V 33A/90A 8PQFN
paypalvisamastercarddiscover
upsdhlsf
比较

¥50.43

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The FDMS8460 is MOSFET N-CH 40V 25A POWER56, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.002402 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-PowerTDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a Power56 of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.5W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 40V, and the Input Capacitance Ciss Vds is 7205pF @ 20V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 25A (Ta), 49A (Tc), and Rds On Max Id Vgs is 2.2 mOhm @ 25A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 110nC @ 10V, and the Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 7 ns, and the Rise Time is 9 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 25 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Rds On Drain Source Resistance is 2.2 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 48 ns, and Typical Turn On Delay Time is 19 ns, and the Channel Mode is Enhancement.

FDMS8350LET40 with circuit diagram, that includes Reel Packaging, they are designed to operate with a Si Technology.

Features

PowerTrench®, SyncFET™ Series


  • Dual Cool? PQFN package

  • Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A

  • Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A

  • High performance technology for extremely low rDS(on)

  • SyncFET? Schottky Body Diode

  • RoHS Compliant



Surface Mount Mounting Type

Applications


  • Synchronous Rectifier for DC/DC Converters

  • Telecom Secondary Side Rectification

  • High End Server

  • Workstation Vcore Low Side

  • Server


产品属性
全选
型号系列: PowerTrench®, SyncFET™
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 25 V
25°C 时电流 - 连续漏极 (Id): 33A(Ta),90A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 1.5 毫欧 @ 33A,10V
漏极电流下的最大栅极阈值电压: 2.2V @ 1mA
最大栅极电荷 (Qg) @ Vgs: 81 nC @ 10 V
最大栅极源电压: ±12V
Vds 时的最大输入电容 (Ciss): 5118 pF @ 13 V
最大功率耗散: 2.5W(Ta),78W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: 8-PQFN(5x6)
封装/外壳: 8-PowerTDFN
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z