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NTHS2101PT1G

ON NTHS2101PT1G

P 通道8 V5.4A(Tj)1.5V @ 250µA1.3W(Ta)表面贴装型

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NTHS2101PT1G
MOSFET P-CH 8V 5.4A CHIPFET
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¥0.72

价格更新:一个月前

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产品详情

Overview

NTHS1206N17N2203JR with pin details, that includes NTHS Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 1206 (3216 Metric), it has an Operating Temperature range of -40°C ~ 125°C, Mounting Type is designed to work in Surface Mount, as well as the ±5% Resistance Tolerance, the device can also be used as 220k Resistance in Ohms 25°C. In addition, the B Value Tolerance is ±3%, the device is offered in 4064K B25 75, the device has a 4073K of B25 85.

The NTHS2101PT1 is MOSFET P-CH 8V 5.4A CHIPFET manufactured by ON. The NTHS2101PT1 is available in 8-SMD, Flat Lead Package, is part of the FETs - Single, , and with support for MOSFET P-CH 8V 5.4A CHIPFET, P-Channel 8V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET?.

Features

MOSFET (Metal Oxide) Technology

Offers an Ultra Low RDS(on) Solution in the ChipFET Package

Miniature ChipFET Package 40% Smaller Footprint than TSOP?6

making it an Ideal Device for Applications where Board Space is at a

Premium

Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Environments such as Portable Electronics

Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the

Operating Voltage used in many Logic ICs in Portable Electronics

Simplifies Circuit Design since Additional Boost Circuits for Gate

Voltages are not Required

Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels using the same Basic Topology

Pb?Free Package is Available


ChipFET™ Supplier Device Package

Applications

Optimized for Battery and Load Management Applications in

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

Charge Control in Battery Chargers

Buck and Boost Converters


产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 8 V
25°C 时电流 - 连续漏极 (Id): 5.4A(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 1.8V,4.5V
漏极电流和栅极至源极电压下的最大导通电阻: 25 毫欧 @ 5.4A,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 30 nC @ 4.5 V
最大栅极源电压: ±8V
Vds 时的最大输入电容 (Ciss): 2400 pF @ 6.4 V
最大功率耗散: 1.3W(Ta)
安装类型: 表面贴装型
供应商器件封装: ChipFET™
封装/外壳: 8-SMD,扁平引线
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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