ON NTHD2102PT1G

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）8V3.4A58 毫欧 @ 3.4A，4.5V1.5V @ 250µA

Overview

The NTHC5513T1G is MOSFET N/P-CH 20V 1206A, that includes NTHC5513 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.002998 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SMD, Flat Lead, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a ChipFET? of Supplier Device Package, and Configuration is N-Channel P-Channel, and the FET Type is N and P-Channel, and Power Max is 1.1W, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 180pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 2.9A, 2.2A, and Rds On Max Id Vgs is 80 mOhm @ 2.9A, 4.5V, and the Vgs th Max Id is 1.2V @ 250μA, and Gate Charge Qg Vgs is 4nC @ 4.5V, and the Pd Power Dissipation is 1.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 3 ns 27 ns, and the Rise Time is 9 ns 13 ns, and Vgs Gate Source Voltage is 12 V, and the Id Continuous Drain Current is 3.9 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 80 mOhms 155 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 10 ns 33 ns, and Typical Turn On Delay Time is 5 ns 7 ns, and the Forward Transconductance Min is 6 S, and Channel Mode is Enhancement.

The NTHD2102PT1 is MOSFET 2P-CH 8V 3.4A CHIPFET, that includes 3.4A Current Continuous Drain Id 25°C, they are designed to operate with a 8V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 P-Channel (Dual), Gate Charge Qg Vgs is designed to work in 16nC @ 2.5V, as well as the 715pF @ 6.4V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 8-SMD, Flat Lead Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 1.1W, and the Rds On Max Id Vgs is 58 mOhm @ 3.4A, 4.5V, and Supplier Device Package is ChipFET?, and the Vgs th Max Id is 1.5V @ 250μA.

Features

? Offers an Ultra Low RDS(on) Solution in the ChipFET Package

? Miniature ChipFET Package 40% Smaller Footprint than TSOP?6

making it an Ideal Device for Applications where Board Space is at a

Premium

? Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Environments such as Portable Electronics

? Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the

Operating Voltage used in many Logic ICs in Portable Electronics

? Simplifies Circuit Design since Additional Boost Circuits for Gate

Voltages are not Required

? Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels using the same Basic Topology

? Pb?Free Package is Available

Applications

? Optimized for Battery and Load Management Applications in

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

? Charge Control in Battery Chargers

? Buck and Boost Converters