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HUFA76609D3ST

ON HUFA76609D3ST

N 通道100 V10A(Tc)3V @ 250µA49W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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HUFA76609D3ST
MOSFET N-CH 100V 10A TO252AA
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价格更新:一个月前

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产品详情

Overview

The HUFA76504DK8T is MOSFET 2N-CH 80V 8-SOIC, that includes UltraFET? Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-SOIC (0.154", 3.90mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-SOP Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 2.5W, the device is offered in 80V Drain to Source Voltage Vdss, the device has a 270pF @ 25V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Rds On Max Id Vgs is 200 mOhm @ 2.5A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 10nC @ 10V.

The HUFA76609D3S is MOSFET N-CH 100V 10A DPAK manufactured by FAIRCHILD. The HUFA76609D3S is available in TO-252-3, DPak (2 Leads + Tab), SC-63 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 10A DPAK, N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA, Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) TO-252AA Rail.

Features

UltraFET™ Series
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 55 ns

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
HUFA76609D3ST applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
型号系列: UltraFET™
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 100 V
25°C 时电流 - 连续漏极 (Id): 10A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 160 毫欧 @ 10A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 16 nC @ 10 V
最大栅极源电压: ±16V
Vds 时的最大输入电容 (Ciss): 425 pF @ 25 V
最大功率耗散: 49W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: TO-252AA
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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