联系我们
中文
HUF76633S3S

ON HUF76633S3S

N 通道100 V39A(Tc)3V @ 250µA145W(Tc)-55°C ~ 175°C(TJ)表面贴装型

比较
onsemi
HUF76633S3S
MOSFET N-CH 100V 39A D2PAK
paypalvisamastercarddiscover
upsdhlsf
比较

面议

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

HUF76633P3_F085 with pin details, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 145 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 58 ns, and Rise Time is 110 ns, and the Id Continuous Drain Current is 38 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 35 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 43 ns, and the Typical Turn On Delay Time is 12 ns, and Qg Gate Charge is 67 nC.

HUF76633S3 with circuit diagram manufactured by FSC. The HUF76633S3 is available in to263 Package, is part of the FETs - Single.

Features

UltraFET™ Series
the avalanche energy rating (Eas) is 267 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 63 ns

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
HUF76633S3S applications of single MOSFETs transistors.

  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
产品属性
全选
型号系列: UltraFET™
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 100 V
25°C 时电流 - 连续漏极 (Id): 39A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 35 毫欧 @ 39A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 67 nC @ 10 V
最大栅极源电压: ±16V
Vds 时的最大输入电容 (Ciss): 1820 pF @ 25 V
最大功率耗散: 145W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: D²PAK(TO-263)
封装/外壳: TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z