ON HUF76423P3

N 通道60 V35A（Tc）3V @ 250µA85W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

Features

• Innovative UltraFET? process

• Low RDS (on)

• Low on-resistance per silicon area

• Available in the JEDEC TO-220AB package

Applications

• Motor drivers

• Relay drivers

• Switching regulators

• Switching converters

• Low-voltage bus switches