ON HUF75652G3

N 通道100 V75A（Tc）4V @ 250µA515W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

Features

Ultra-Low On-Resistance: 0.008?, VGS = 10V

Temperature Compensated PSPICE? and SABER? Electrical Models

Spice and SABER Thermal Impedance Models

Peak Current vs Pulse Width Curve

UIS Rating Curve

Pb-Free and Halogen Free

RoHS compliant

Applications

AC-DC Merchant Power Supply

Workstations

Servers

Mainframe

Fast Switching Applications

LLC Resonant Converters