ON HUF75545P3

N 通道80 V75A（Tc）4V @ 250µA270W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

Features

• UIS Rating Curve

• Peak Current vs Pulse Width Curve

• Spice and SABER Thermal Impedance Models

• Ultra Low On-Resistance rDS(ON) = 0.010 |?, VGS = 10 V

• Temperature Compensated PSPICE? and SABERTMElectrical Models

Applications

• Industrial

• Workstation

• Server & Mainframe

• Power management

• AC-DC Merchant Power Supply - Servers & Workstations