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HUFA76439P3

ON HUFA76439P3

N 通道60 V75A(Tc)3V @ 250µA155W(Tc)-55°C ~ 175°C(TJ)通孔

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HUFA76439P3
MOSFET N-CH 60V 75A TO220-3
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产品详情

Overview

HUFA76429D3ST_F085 with pin details, that includes Reel Packaging, they are designed to operate with a 0.009184 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 110 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 56 ns, and Rise Time is 36 ns, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 20 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 23 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 60 ns, and the Typical Turn On Delay Time is 7.7 ns, and Channel Mode is Enhancement.

The HUFA76429S3S is MOSFET N-CH 60V 47A D2PAK manufactured by fsc. The HUFA76429S3S is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 47A D2PAK, N-Channel 60V 47A (Tc) 110W (Tc) Surface Mount D?PAK (TO-263AB), Trans MOSFET N-CH 60V 47A 3-Pin(2+Tab) TO-263AB.

Features

UltraFET™ Series
a 60V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
HUFA76439P3 applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
产品属性
全选
型号系列: UltraFET™
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 75A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 12 毫欧 @ 75A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 84 nC @ 10 V
最大栅极源电压: ±16V
Vds 时的最大输入电容 (Ciss): 2745 pF @ 25 V
最大功率耗散: 155W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220-3
封装/外壳: TO-220-3
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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