ON HUFA76429D3ST-F085

N 通道60 V20A（Tc）3V @ 250µA110W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

Features

Thin wafer XPT™ technology

Low on-state voltages VCE(sat)

Co-packed fast recovery diodes

Positive temperature coefficient of VCE(sat)

International standard size high-voltage packages

Applications

Pulser circuits

Laser and X-ray generators

High-voltage power supplies

High-voltage test equipment

Capacitor discharge circuits

AC switches