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FDW252P

ON FDW252P

P 通道20 V8.8A(Ta)1.5V @ 250µA1.3W(Ta)-55°C ~ 150°C(TJ)表面贴装型

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FDW252P
MOSFET P-CH 20V 8.8A 8TSSOP
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产品详情

Overview

The FDW2521C is MOSFET N/P-CH 20V 8-TSSOP, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-TSSOP (0.173", 4.40mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-TSSOP Supplier Device Package, the device can also be used as N and P-Channel FET Type. In addition, the Power Max is 600mW, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 1082pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 5.5A, 3.8A, and Rds On Max Id Vgs is 21 mOhm @ 5.5A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 17nC @ 4.5V.

The FDW2520C is MOSFET N/P-CH 20V 6A/4.4A 8TSSOP, that includes 6A, 4.4A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as N and P-Channel, Gate Charge Qg Vgs is designed to work in 20nC @ 4.5V, as well as the 1325pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 8-TSSOP (0.173", 4.40mm Width) Package Case, the device has a Digi-ReelR of Packaging, and Power Max is 600mW, and the Rds On Max Id Vgs is 18 mOhm @ 6A, 4.5V, and Series is PowerTrenchR, and the Supplier Device Package is 8-TSSOP, and Vgs th Max Id is 1.5V @ 250μA.

Features

PowerTrench® Series


  • Low gate charge

  • Extremely low RDS (on)

  • Available in the TSSOP-8 package

  • High-performance trench technology

  • A wide range of gate drive voltage (2.5V – 12V)



Surface Mount Mounting Type

Applications


  • Motor drive

  • Load switch

  • DC/DC conversion

  • Power management


产品属性
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型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 20 V
25°C 时电流 - 连续漏极 (Id): 8.8A(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 2.5V,4.5V
漏极电流和栅极至源极电压下的最大导通电阻: 12.5 毫欧 @ 8.8A,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 66 nC @ 4.5 V
最大栅极源电压: ±12V
Vds 时的最大输入电容 (Ciss): 5045 pF @ 10 V
最大功率耗散: 1.3W(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: 8-TSSOP
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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