ON FDW2501NZ

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）20V5.5A18 毫欧 @ 5.5A，4.5V1.5V @ 250µA

Overview

The FDW2501N is MOSFET 2N-CH 20V 6A 8-TSSOP, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-TSSOP (0.173", 4.40mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-TSSOP Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 600mW, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 1290pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 6A, and Rds On Max Id Vgs is 18 mOhm @ 6A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 17nC @ 4.5V.

FDW2501N-5 with circuit diagram manufactured by KEXIN. The FDW2501N-5 is available in TSSOP08 Package, is part of the IC Chips.

Features

? VGSS range extension (12V) for battery applications

? Diode for ESD protection (note 3)

? Ultra-low RDS with high performance trench technology (ON)

? TSSOP-8 packaging with a low profile

Applications

? loading switch

? Power supply

? Conversion of DC/DC

? Power administration