ON FDW2511NZ

MOSFET（金属氧化物）逻辑电平门2 N 沟道（双）共漏20V7.1A20 毫欧 @ 7.1A，4.5V1.5V @ 250µA

Overview

The FDW2510NZ is MOSFET 2N-CH 20V 6.4A 8TSSOP, that includes PowerTrenchR Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-TSSOP (0.173", 4.40mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-TSSOP Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 1.1W, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 870pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 6.4A, and Rds On Max Id Vgs is 24 mOhm @ 6.4A, 4.5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 12nC @ 4.5V.

FDW2509ZN with circuit diagram manufactured by FAIRCHILD. The FDW2509ZN is available in MSOP8 Package, is part of the IC Chips.

Features

7.1A, 20V rDS(ON) =0.020?, VGS = 4.5V

 rDS(ON) =0.025?, VGS = 2.5V

Extended VGS range (±12 V) for battery applications

HBM ESD Protection Level of 3.5kV Typical (note 3)

High performance trench technology for extremely low

rDS(ON)

 Low profile TSSOP-8 package

Applications

Load switch

Battery charge

Battery disconnect circuits