ON FDV303N

N 通道25 V680mA（Ta）1.5V @ 250µA350mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Features

Tape & Reel (TR) Package
a continuous drain current (ID) of 680 mA
a drain-to-source breakdown voltage of 25 V voltage
single MOSFETs transistor is 450 mΩ
a 25 V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications

There are a lot of Rochester Electronics
FDV303N applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.