ON FDN335N

N 通道20 V1.7A（Ta）1.5V @ 250µA500mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

DescriptionThis N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge forsuperior switching performance.

Features• 1.7 A, 20 V. Rds(on)= 0.07 Ω @ Vgs= 4.5 V Rds(on)= 0.100 Ω @ Vgs= 2.5 V.• Low gate charge (3.5nC typical).• High performance trench technology for extremely low Rds(on)• High power and current handling capability.

Features

• 1.7 A, 20 V

• RDS(on) = 0.07 |@ VGS = 4.5 V

• RDS(on) = 0.100 | @ VGS = 2.5 V

• Low gate charge (3.5nC typical).

• High-performance trench technology for highly low RDS(ON)

• High power and current handling capability

Applications

• This product is general usage and suitable for many different applications.

• DC/DC converter

• Load Switch