ON FDMS9600S

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V12A，16A8.5 毫欧 @ 12A，10V3V @ 250µA

Overview

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.

Features

Q1:N-Channel

Max rps(on)=8.5m|?at VGs=10V￡?1o=12A

Max rps(on)=12.4m|?at VGs=4.5Vlp=10A

Q2:N-Channel

Max rps(on)=5.5m|?atVGs=10V￡?Io=16A

Max rps(on)=7.0m|? at VGs=4.5V￡?lD=14A

Low Qg high side MOSFET

Low rps(on) low side MOSFET

Thermally efficient dual Power 56 package

Pinout optimized for simple PCB design

RoHS Compliant

Applications

FDMS9600S             Applications

step-down power supply