ON FDMS8690

N 通道30 V14A（Ta），27A（Tc）3V @ 250µA2.5W（Ta），37.8W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

The FDMS8680 is MOSFET N-CH 30V 14A POWER56, that includes Reel Packaging, they are designed to operate with a 0.002402 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as Power-56-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Quad Drain Triple Source Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2.5 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 2 ns, and Rise Time is 3 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 14 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 8.5 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 21 ns, and the Typical Turn On Delay Time is 9 ns, and Forward Transconductance Min is 72 S, and the Channel Mode is Enhancement.

FDMS867OS with circuit diagram manufactured by FAI. The FDMS867OS is available in QFN Package, is part of the IC Chips.

Features

• Max rDs(on) = 9.0m2 atVcs= 10V, lp= 14.0A

• Max rDs(on)= 12.5mQ at Vss =4.5V,Ip= 11.5A

• High-performance trench technology for extremely low rDs(n) and gate charge

• Minimal Qgd (2 9nC typical)

• RoHS Compliant

Applications

• High-Efficiency DC-DC converters.

• Notebook CPU power supply

• Multi-purpose Point of Load