ON FDMS86152

N 通道100 V14A（Ta），45A（Tc）4V @ 250µA2.7W（Ta），125W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A

• 100% UIL tested

• MSL1 robust package design

• Advanced Package and Silicon combination for low rDS(on) and high efficiency

• Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A

• RoHS Compliant

Applications

• Load Switch

• General Power Conversion

• Secondary Synchronous Rectifier

• Primary DC-DC MOSFET

• Circuit Protection

• Battery Motor Control