ON FDMC8622

N 通道100 V4A（Ta），16A（Tc）4V @ 250µA2.5W（Ta），31W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
4A (Ta), 16A (Tc) Current - Continuous Drain (Id) @ 25°C
6V, 10V Drive Voltage (Max Rds On, Min Rds On)
56mOhm @ 4A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
7.3 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
402 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
2.5W (Ta), 31W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type

Applications

Shielded Gate MOSFET Technology

Max rDS(on) = 56 mΩat VGS = 10 V, ID = 4 A

Max rDS(on) = 100 mΩat VGS = 6 V, ID = 3 A

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used surface mount package

100% UIL Tested

Termination is Lead-free and RoHS Compliant

FDMC8622   Applications

This product is general usage and suitable for many different applications.