Fairchild FDMC8588

N 通道25 V16.5A（Ta），40A（Tc）1.8V @ 250µA2.4W（Ta），26W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

• State-of-the-art switching performance

• Lower output capacitance, gate resistance, and gate charge boost efficiency

• Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction

• RoHS Compliant

• Lead Free

Applications

• Switching Applications

• High side switching for high end computing

• High power density DC-DC synchronous buck converter

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid