Overview
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
40 V Drain to Source Voltage (Vdss)
12A (Ta), 14A (Tc) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
9.7mOhm @ 12A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
26 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1850 pF @ 20 V Input Capacitance (Ciss) (Max) @ Vds
2.3W (Ta), 30W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type