ON FDB8874

N 通道30 V21A（Ta），121A（Tc）2.5V @ 250µA110W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

The FDB8870 is MOSFET N-CH 30V 23A TO-263AB, that includes PowerTrench Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a FDB8870_NL, that offers Unit Weight features such as 0.046296 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-252-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 160 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 47 ns, and Rise Time is 98 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 160 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 3.9 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 75 ns, and the Typical Turn On Delay Time is 10 ns, and Channel Mode is Enhancement.

FDB8870_F085 with circuit diagram, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 47 ns, that offers Id Continuous Drain Current features such as 23 A, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as SMD/SMT Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in TO-252-3 Package Case, the device has a Reel of Packaging, and Pd Power Dissipation is 160 W, and the Rds On Drain Source Resistance is 3.9 mOhms, and Rise Time is 98 ns, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Typical Turn Off Delay Time is 75 ns, and the Typical Turn On Delay Time is 10 ns, and Unit Weight is 0.046296 oz, and the Vds Drain Source Breakdown Voltage is 30 V, and Vgs Gate Source Voltage is 20 V.

Features

• rDS(ON) = 4.7m?, VGS = 10V, ID = 40A

• rDS(ON) = 6.0m?, VGS = 4.5V, ID = 40A   

• High-performance trench  technology  for  extremely  low rDS(ON) 

• Low gate charge

• High power and current handling 

Applications

• Cellular phones 

• Laptop computers

• Photovoltaic systems 

• Wind turbines

• Shunt voltage regulator and the series voltage regulator