ST STN3NF06L

N 通道60 V4A（Tc）2.8V @ 250µA3.3W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This Power MOSFET is the latest development of STMicroelectronics unique \"Single Feature Size\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

STripFET™ II Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
60 V Drain to Source Voltage (Vdss)
4A (Tc) Current - Continuous Drain (Id) @ 25°C
5V, 10V Drive Voltage (Max Rds On, Min Rds On)
100mOhm @ 1.5A, 10V Rds On (Max) @ Id, Vgs
2.8V @ 250µA Vgs(th) (Max) @ Id
9 nC @ 5 V Gate Charge (Qg) (Max) @ Vgs
±16V Vgs (Max)
340 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
3.3W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type