ST STN3N45K3

N 通道450 V600mA（Tc）4.5V @ 50µA3W（Ta）150°C（TJ）表面贴装型

Overview

This SuperMESH3 Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

Features

SuperMESH3™ Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
450 V Drain to Source Voltage (Vdss)
600mA (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
4Ohm @ 600mA, 10V Rds On (Max) @ Id, Vgs
4.5V @ 50µA Vgs(th) (Max) @ Id
9.5 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
164 pF @ 50 V Input Capacitance (Ciss) (Max) @ Vds
3W (Ta) Power Dissipation (Max)
150°C (TJ) Operating Temperature
Surface Mount Mounting Type