ST STH260N6F6-2

N 通道60 V180A（Tc）4V @ 250µA300W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Features

DeepGATE™, STripFET™ VI Series
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 144.4 ns
based on its rated peak drain current 720A.
a threshold voltage of 2V
a 60V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications

There are a lot of STMicroelectronics
STH260N6F6-2 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies