联系我们
中文
STH240N75F3-6

ST STH240N75F3-6

N 通道75 V180A(Tc)4V @ 250µA300W(Tc)-55°C ~ 175°C(TJ)表面贴装型

比较
STH240N75F3-6
MOSFET N-CH 75V 180A H2PAK-6
paypalvisamastercarddiscover
upsdhlsf
比较

¥14.40

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

STH240N10F7-2 with pin details, that includes N-channel STripFET Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 300 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 112 ns, and Rise Time is 139 nS, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 180 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 2.5 V, and the Rds On Drain Source Resistance is 2.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 110 ns, and Typical Turn On Delay Time is 49 ns, and the Qg Gate Charge is 160 nC, and Channel Mode is Enhancement.

STH230084.1 with EDA / CAD Models manufactured by STH. The STH230084.1 is available in QFP Package, is part of the IC Chips.

Features

STripFET™ III Series
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 720A.
a threshold voltage of 2V

Surface Mount Mounting Type

Applications


There are a lot of STMicroelectronics
STH240N75F3-6 applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
产品属性
全选
型号系列: STripFET™ III
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 75 V
25°C 时电流 - 连续漏极 (Id): 180A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 3 毫欧 @ 90A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 87 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 6800 pF @ 25 V
最大功率耗散: 300W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: H2PAK-6
封装/外壳: TO-263-7,D²Pak(6 引线 + 接片)
STMicroelectronics

STMicroelectronics

STMicroelectronics(ST)是一家领先的半导体公司,成立于1987年,总部位于瑞士日内瓦。公司提供多种半导体解决方案,应用于汽车、工业、个人电子和通信等领域。ST的产品组合包括微控制器、传感器、模拟IC和电源管理芯片等。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z