ST STGWT40V60DLF

600 V80 A411µJ（关）-55°C ~ 175°C（TJ）TO-3P-3，SC-65-3

Overview

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

• Designed for soft commutation only

• Maximum junction temperature: T_J = 175 °C

• Tail-less switching off

• V_CE(sat) = 1.8 V (typ.) @ I_C = 40 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Low V_F soft recovery co-packaged diode

Applications

• Induction heating

• Microwave oven

• Resonant converters